Oak Bluffs, MA old classifieds archive and funnies > By Year
> 2003
> 2) ge-10 aka = 2N4264 2N706/51 npn silicon transistors
2) ge-10 aka = 2N4264 2N706/51 npn silicon transistors
Silicon AUDIO AMPLIFIER TRANSISTORS
Photo is for ILLUSTRATIVE PURPOSES. This is the MOTOROLA 2N4264, which looks similar to the GE, which is FACTORY PACKED IN ITS ORIGINAL PACKAGING (Please see second photo below.)
Transistors thought to be from 1960s-1970s
in Original Factory-Sealed Packaging
Shown below are specs of the GE-10 Transistor's NTE Equivalent
Collector-Emitter Voltage, VCEO
Continuous Collector Current, IC
Total Device Dissipation (TA = +25°C), PD
Total Device Dissipation (TC = +25°C), PD
Operating Junction Temperature Range, TJ
Storage Temperature Range, Tstg
Thermal Resistance, Junction-to-Case, RthJC
Thermal Resistance, Junction-to-Ambient, RthJA
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
VCE = 10V, IC = 20mA, f = 100MHz
VCB = 0.5V, IC = 0, f = 100kHz
VCC = 30V, IC = 150mA, VBE(off) = 2V, IB1 = 15mA
VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA
Note 1. Pulse Test: Pulse Width
The following are specs contained on the GE-10 antistatic packaging:
There is also a small diagram on the package, featuring the E, C, and B positions.
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Please add 8.25% for delivery to NEW YORK STATE
