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Motorola transistor npn MJ3000 nte 245


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10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATT
Silicon Complementary Transistors
The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for use as output devices in general purpose amplifier applications.
High DC Current Gain: hFE = 4000 Typ @ IC = 5A
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
C = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/°C
Operating Junction Temperature Range, T
J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Thermal Resistance, Junction–to–Case, R
thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17°C/W
(TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter SustainingVoltage V
CEO(sus) IC = 100mA, IB = 0, Note 1 80 – – V
Collector–Emitter Leakage Current I
CEO VCE = 40V, IB = 0 – – 1.0 mA
CER VEB = 80V, RBE = 1kΩ – – 1.0 mA
EB = 80V, RBE = 1kΩ, TC = +150°C – – 5.0 mA
EBO VBE = 5V, IC = 0 – – 2.0 mA
Note 1. Pulse Test: Pulse Width = 300
Electrical Characteristics (Cont’d):
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Saturation Voltage V
CE(sat) IC = 5A, IB = 20mA – – 2.0 V
BE VCE = 3V, IC = 5A – – 3.0 V
Note 1. Pulse Test: Pulse Width = 300
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Motorola transistor npn MJ3000 nte 245