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> SVT300-10 si npn power bjt bipolar junction transistor
SVT300-10 si npn power bjt bipolar junction transistor
SVT300-10 Si NPN Power BJT Bipolar Junction Transistor
Bipolar Junction Transistor Si NPN. Made by TRW. Dated 1971.
Description = Si NPN Power BJT
I(C) Abs.(A) Collector Current = 20
Absolute Max. Power Diss. (W) = 150
h(FE) Min. Static Current Gain = 15
@I(C) (A) (Test Condition) = 10
@V(CE) (V) (Test Condition) = 5.0
f(T) Min. (Hz) Transition Freq = 50M
t(d) Max. (s) Delay time. = 75n
t(r) Max. (s) Rise time = 200n
t(s) Max. (s) Storage time. = 1.7u
t(f) Max. (s) Fall time. = 400n