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> 5 pcs 2SK591 nec logic level mosfet
5 pcs 2SK591 nec logic level mosfet
For Specifications ( Click Here)
Manufactured by NEC Electronics
* Dynamic dv/dt Rating
* Logic Level Gate Drive
* RDS(on) Specified at VGS = 4V & 5V
* +175°C Operating Temperature
* Ease of Paralleling
* Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 5V, TC = +25°C), ID
Continuous Drain Current (VGS = 5V, TC = +100°C), ID
Pulsed Drain Current (Note 1), IDM
Total Power Dissipation (TC = +25°C), PD
Derate Linearly Above +25°C
Gate-Source Voltage, VGS
Single Pulse Avalanche Energy (Note 2), EAS
Peak Diode Recovery dv/dt (Note 3), dv/dt
Operating Junction Temperature Range, TJ
Storage Temperature Range, Tstg
Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL
Mounting Torque, 6-32 or M3 Screw
10 lbf · in (1.1 N · m)
Thermal Resistance, Junction-to-Case, RthJC
Thermal Resistance, Junction-to-Ambient, RthJA
Thermal Resistance, Case-to-Sink (Flat, Greased Surface), RthCS
Repetitive rating: Pulse width limited by maximum junction temperature.
L = 285µH, VDD = 25V, RG = 25 Ohm, Starting TJ = +25°C, IAS = 30A.
ISD
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Referenced to +25°C, ID = 1mA
Static Drain-Source On-State Resistance
VGS = 5V, ID = 18A, Note 4
VGS = 4V, ID = 15A, Note 4
Gate Threshold Voltage
Forward Transconductance
VDS = 25V, ID = 18A, Note 4
Drain-to-Source Leakage Current
VDS = 48V, VGS = 0V, TJ = +150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 5V, ID = 30A, VDS = 48V, Note 4
Gate-to-Drain ("Miller") Charge
VDD = 30V, ID = 30A, RG = 6.0 Ohm, RD = 1.0 Ohm
Internal Drain Inductance
Between lead, 6mm (0.25") from package and center of die contact
Internal Source Inductance
VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
TJ = +25°C, IS = 30A, VGS = 0V, Note 4
TJ = +25°C, IF = 30A, di/dt = 100A/µs, Note 4
Reverse Recovery Change
Intrinsic turn-on time is neglegible (turn-on is dominated by LS + LD)
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