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> 2N618 germanium high-power bjt transistor pnp motorola
2N618 germanium high-power bjt transistor pnp motorola
2N618 Germanium High-Power BJT Transistor PNP Motorola
Germanium PNP High-Power Bipolar Junction Transistor, type 2N618. Made by Motorola, dated 2-16.
Description = Ge PNP Power BJT
I(C) Abs.(A) Collector Current = 3.0
Absolute Max. Power Diss. (W) = 45
@V(CBO) (V) (Test Condition) = 60
@I(C) (A) (Test Condition) = 2.0
@I(B) (A) (Test Condition) = 200m
h(FE) Min. Static Current Gain = 60
h(FE) Max. Current gain. = 140
@I(C) (A) (Test Condition) = 1.0
@V(CE) (V) (Test Condition) = 4.0
f(T) Min. (Hz) Transition Freq = 8.5k
@I(C) (A) (Test Condition) = 1.0
@V(CE) (V) (Test Condition) = 4.0
t(f) Max. (s) Fall time. = 40u
