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2N669 transistor germanium pnp power bjt motorola
2N669 Transistor Germanium PNP Power BJT Motorola
Bipolar germanium power PNP transistor, type 2N669. Made by Motorola.
Description = Ge PNP Power BJT
I(C) Abs.(A) Collector Current = 3.0
Absolute Max. Power Diss. (W) = 90
@V(CBO) (V) (Test Condition) = 30
@I(C) (A) (Test Condition) = 3.0
@I(B) (A) (Test Condition) = 300m
h(FE) Min. Static Current Gain = 75
h(FE) Max. Current gain. = 250
@I(C) (A) (Test Condition) = 500m
@V(CE) (V) (Test Condition) = 2.0
f(T) Min. (Hz) Transition Freq = 3.0k
@I(C) (A) (Test Condition) = 500m
@V(CE) (V) (Test Condition) = 12